View G5N120BND_7694406.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

?2003 fairchild semiconductor corporation hgtG5N120BND, hgtp5n120bnd, rev. b1 hgtG5N120BND, hgtp5n120bnd 21a, 1200v, npt series n-channel igbts with anti-parallel hyperfast diodes the hgtG5N120BND and hgtp5n120bnd are n on- p unch t hrough (npt) igbt designs. they are new members of the mos gated high voltage switching igbt family. igbts combine the best features of mosfets and bipolar transistors. this device has the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. the igbt used is the development type ta49308. the diode used is the development type ta49058 (part number rhrd6120). the igbt is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: ac and dc motor controls, power supplies and drivers for solenoids, relays and contactors. formerly developmental type ta49306. symbol features ? 21a, 1200v, t c = 25 o c 1200v switching soa capability typical fall time . . . . . . . . . . . . . . . . 175ns at t j = 150 o c short circuit rating low conduction loss thermal impedance spice model temperature compensating saber? model www.fairchildsemi.com related literature - tb334 ?guidelines for soldering surface mount components to pc boards? packaging jedec style to-247 jedec to-220ab (alternate version) ordering information part number package brand hgtG5N120BND to-247 5n120bnd hgtp5n120bnd to-220ab 5n120bnd note: when ordering, use the entire part number. i.e., hgtG5N120BND. e g c g c e collector (flange) g collector e (flange) c fairchild semiconductor igbt product is covered by one or more of the following u.s. patents 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 data sheet may 2003 free datasheet http://
?2003 fairchild semiconductor corporation hgtG5N120BND, hgtp5n120bnd, rev. b1 absolute maximum ratings t c = 25 o c, unless otherwise specified hgtG5N120BND hgtp5n120bnd units collector to emitter voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .bv ces 1200 v collector current continuous at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c25 21 a at t c = 110 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c110 10 a collector current pulsed (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i cm 40 a gate to emitter voltage continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v ges 20 v gate to emitter voltage pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v gem 30 v switching safe operating area at t j = 150 o c (figure 2) . . . . . . . . . . . . . . . . . . . . . . . ssoa 30a at 1200v power dissipation total at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 167 w power dissipation derating t c > 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 w/ o c operating and storage junction temperature range . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -55 to 150 o c maximum lead temperature for soldering leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l 300 o c package body for 10s, see tech brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t pkg 260 o c short circuit withstand time (note 2) at v ge = 15v. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t sc 8 s short circuit withstand time (note 2) at v ge = 12v. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t sc 15 s caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. notes: 1. pulse width limited by maximum junction temperature. 2. v ce(pk) = 840v, t j = 125 o c, r g = 25 ?. electrical specifications t c = 25 o c, unless otherwise specified parameter symbol test conditions min typ max units collector to emitter breakdown voltage bv ces i c = 250 a, v ge = 0v 1200 - - v collector to emitter leakage current i ces v ce = 1200v t c = 25 o c - - 250 a t c = 125 o c - 100 - a t c = 150 o c--1.5ma collector to emitter saturation voltage v ce(sat) i c = 5a, v ge = 15v t c = 25 o c - 2.45 2.7 v t c = 150 o c-3.74.2v gate to emitter threshold voltage v ge(th) i c = 45 a, v ce = v ge 6.0 6.8 - v gate to emitter leakage current i ges v ge = 20v - - 250 na switching soa ssoa t j = 150 o c, r g = 25 ?, v ge = 15v, l = 5mh, v ce(pk) = 1200v 30 - - a gate to emitter plateau voltage v gep i c = 5a, v ce = 600v - 10.5 - v on-state gate charge q g(on) i c = 5a, v ce = 600v v ge = 15v - 53 65 nc v ge = 20v - 60 72 nc current turn-on delay time t d(on)i igbt and diode at t j = 25 o c, i ce = 5a, v ce = 960v, v ge = 15v, r g = 25 ? , l = 5mh, test circuit (figure 20) -2225ns current rise time t ri -1520ns current turn-off delay time t d(off)i - 160 180 ns current fall time t fi - 130 160 ns turn-on energy e on - 450 600 j turn-off energy (note 3) e off - 390 450 j hgtG5N120BND, hgtp5n120bnd free datasheet http://
?2003 fairchild semiconductor corporation hgtG5N120BND, hgtp5n120bnd, rev. b1 current turn-on delay time t d(on)i igbt and diode at t j = 150 o c, i ce = 5a, v ce = 960v, v ge = 15v, r g = 25 ? , l = 5mh, test circuit (figure 20) -2025ns current rise time t ri -1520ns current turn-off delay time t d(off)i - 182 280 ns current fall time t fi - 175 200 ns turn-on energy e on - 1000 1300 j turn-off energy (note 3) e off - 560 800 j diode forward voltage v ec i ec = 10a - 2.70 3.50 v diode reverse recovery time t rr i ec = 7a, dl ec /dt = 200a/ s - 50 65 ns i ec = 1a, dl ec /dt = 200a/ s - 30 40 ns thermal resistance junction to case r jc igbt - - 0.75 o c/w diode - - 1.75 o c/w note: 3. turn-off energy loss (e off ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (i ce = 0a). all devices were tested per jedec standard no. 24-1 method for measurement of power device turn-off switching loss. this test method produces the true total turn-off energy loss. electrical specifications t c = 25 o c, unless otherwise specified (continued) parameter symbol test conditions min typ max units typical performance curves unless otherwise specified figure 1. dc collector current vs case temperature figure 2. minimum switching safe operating area t c , case temperature ( o c) i ce , dc collector current (a) 50 0 25 75 100 125 150 5 10 15 25 20 v ge = 15v v ce , collector to emitter voltage (v) 1400 0 i ce , collector to emitter current (a) 600 800 400 200 1000 1200 0 t j = 150 o c, r g = 25 ? , v ge = 15v, l = 5mh 5 10 15 20 25 30 35 hgtG5N120BND, hgtp5n120bnd free datasheet http://
?2003 fairchild semiconductor corporation hgtG5N120BND, hgtp5n120bnd, rev. b1 figure 3. operating frequency vs collector to emitter current figure 4. short circuit withstand time figure 5. collector to emitter on-state voltage figure 6. collector to emitter on-state voltage figure 7. turn-on energy loss vs collector to emitter current figure 8. turn-off energy loss vs collector to emitter current typical performance curves unless otherwise specified (continued) 4 i ce , collector to emitter current (a) 10 10 8 50 6 100 2 200 t c v ge 75 o c 12v 75 o c 15v t j = 150 o c, r g = 25 ? , l = 5mh, v ce = 960v t c v ge 12v 15v 110 o c 110 o c f max1 = 0.05 / (t d(off)i + t d(on)i ) r ?jc = 0.75 o c/w, see notes p c = conduction dissipation (duty factor = 50%) f max2 = (p d - p c ) / (e on + e off ) t c = 75 o c, v ge = 15v ideal diode f max , operating frequency (khz) v ge , gate to emitter voltage (v) i sc , peak short circuit current (a) t sc , short circuit withstand time ( s) 11 12 13 14 15 10 20 30 40 20 30 40 50 70 t sc i sc 60 10 15 25 35 80 v ce = 840v, r g = 25 ? , t j = 125 o c t c = -55 o c 024 v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) 0 5 10 15 6810 30 25 20 pulse duration = 250 s duty cycle <0.5%, v ge = 12v t c = 25 o c t c = 150 o c i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 10 15 20 0246810 5 25 0 30 t c = -55 o c t c = 25 o c t c = 150 o c duty cycle <0.5%, v ge = 15v pulse duration = 250 s e on , turn-on energy loss ( j) 2500 1500 i ce , collector to emitter current (a) 1000 500 5 37 6 4 2 3000 8910 2000 0 r g = 25 ? , l = 5mh, v ce = 960v t j = 150 o c, v ge = 12v, v ge = 15v t j = 25 o c, v ge = 12v, v ge = 15v i ce , collector to emitter current (a) e off , turn-off energy loss ( j) 6 4 357 2 300 200 400 500 9 8 600 700 800 900 10 t j = 25 o c, v ge = 12v or 15v t j = 150 o c, v ge = 12v or 15v r g = 25 ? , l = 5mh, v ce = 960v hgtG5N120BND, hgtp5n120bnd free datasheet http://
?2003 fairchild semiconductor corporation hgtG5N120BND, hgtp5n120bnd, rev. b1 figure 9. turn-on delay time vs collector to emitter current figure 10. turn-on rise time vs collector to emitter current figure 11. turn-off delay time vs collector to emitter current figure 12. turn-off fall time vs collector to emitter current figure 13. transfer characteristic figure 14. gate charge waveforms typical performance curves unless otherwise specified (continued) i ce , collector to emitter current (a) t di , turn-on delay time (ns) 3 2 46 20 30 579 810 40 35 25 15 r g = 25 ? , l = 5mh, v ce = 960v t j = 25 o c, t j = 150 o c, v ge = 12v t j = 25 o c, t j = 150 o c, v ge = 15v i ce , collector to emitter current (a) t ri ,rise time(ns) 0 10 15 40 20 4 2 30 37 6 5 25 10 9 8 35 r g = 25 ? , l = 5mh, v ce = 960v t j = 25 o c, t j = 150 o c, v ge = 15v t j = 25 o c, t j = 150 o c, v ge = 12v 10 100 i ce , collector to emitter current (a) t d(off)i , turn-off delay time (ns) 250 225 200 175 150 23456789 r g = 25 ? , l = 5mh, v ce = 960v v ge = 12v, v ge = 15v, t j = 150 o c v ge = 12v, v ge = 15v, t j = 25 o c 125 i ce , collector to emitter current (a) t fi , fall time (ns) 150 50 250 100 200 2345678910 r g = 25 ? , l = 5mh, v ce = 960v t j = 25 o c, v ge = 12v or 15v t j = 150 o c, v ge = 12v or 15v i ce , collector to emitter current (a) 0 10 20 30 13 78910 12 v ge , gate to emitter voltage (v) 11 40 50 60 14 15 70 t c = 25 o c t c = -55 o c t c = 150 o c 80 pulse duration = 250 s duty cycle <0.5%, v ce = 20v v ge , gate to emitter voltage (v) q g , gate charge (nc) 14 4 16 2 6 0 60 50 40 8 10 12 30 20 10 0 v ce = 800v v ce = 400v v ce = 1200v i g(ref) = 1ma, r l = 120 ? , t c = 25 o c hgtG5N120BND, hgtp5n120bnd free datasheet http://
?2003 fairchild semiconductor corporation hgtG5N120BND, hgtp5n120bnd, rev. b1 figure 15. capacitance vs collector to emitter voltage figure 16. collector to emitter on-state voltage figure 17. normalized transient thermal response, junction to case figure 18. diode forward current vs forward voltage drop figure 19. recovery times vs forward current typical performance curves unless otherwise specified (continued) v ce , collector to emitter voltage (v) 0 5 10 15 20 25 0 0.5 c ies c oes 1.0 c res frequency = 1mhz c, capacitance (nf) 1.5 2.0 i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 00.51.0 duty cycle < 0.5%, t c = 110 o c pulse duration = 250 s v ge = 15v v ge = 10v 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 2 4 6 8 10 t 1 , rectangular pulse duration (s) z jc , normalized thermal response 10 -2 10 -1 10 0 10 -5 10 -3 10 -2 10 -1 10 0 10 -4 duty factor, d = t 1 / t 2 peak t j = (p d x z jc x r jc ) + t c single pulse 0.5 0.2 0.1 0.05 0.02 0.01 t 1 t 2 p d 1 10 100 012345678 i f , forward current (a) v f , forward voltage (v) 150 o c -55 o c 25 o c 60 50 40 30 20 10 0 1234567 i f , forward current (a) t, recovery time (ns) t c = 25 o c, dl ec / dt = 200a/ s t rr t a t b hgtG5N120BND, hgtp5n120bnd free datasheet http://
?2003 fairchild semiconductor corporation hgtG5N120BND, hgtp5n120bnd, rev. b1 handling precautions for igbts insulated gate bipolar transistors are susceptible to gate- insulation damage by the electrostatic discharge of energy through the devices. when handling these devices, care should be exercised to assure that the static charge built in the handler?s body capacitance is not discharged through the device. with proper handling and application procedures, however, igbts are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. igbts can be handled safely if the following basic precautions are taken: 1. prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ?eccosorbd? ld26? or equivalent. 2. when devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. tips of soldering irons should be grounded. 4. devices should never be inserted into or removed from circuits with power on. 5. gate voltage rating - never exceed the gate-voltage rating of v gem . exceeding the rated v ge can result in permanent damage to the oxide layer in the gate region. 6. gate termination - the gates of these devices are essentially capacitors. circuits that leave the gate open- circuited or floating should be avoided. these conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. gate protection - these devices do not have an internal monolithic zener diode from gate to emitter. if gate protection is required an external zener is recommended. operating frequency information operating frequency information for a typical device (figure 3) is presented as a guide for estimating device performance for a specific application. other typical frequency vs collector current (i ce ) plots are possible using the information shown for a typical unit in figures 5, 6, 7, 8, 9 and 11. the operating frequency plot (figure 3) of a typical device shows f max1 or f max2 ; whichever is smaller at each point. the information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f max1 is defined by f max1 = 0.05/(t d(off)i + t d(on)i ). deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. other definitions are possible. t d(off)i and t d(on)i are defined in figure 19. device turn-off delay can establish an additional frequency limiting condition for an application other than t jm . t d(off)i is important when controlling output ripple under a lightly loaded condition. f max2 is defined by f max2 = (p d - p c )/(e off + e on ). the allowable dissipation (p d ) is defined by p d =(t jm -t c )/r jc . the sum of device switching and conduction losses must not exceed p d . a 50% duty factor was used (figure 3) and the conduction losses (p c ) are approximated by p c =(v ce xi ce )/2. e on and e off are defined in the switching waveforms shown in figure 21. e on is the integral of the instantaneous power loss (i ce x v ce ) during turn-on and e off is the integral of the instantaneous power loss (i ce xv ce ) during turn-off. all tail losses are included in the calculation for e off ; i.e., the collector current equals zero (i ce = 0). test circuit and waveforms figure 20. inductive switching test circuit figure 21. switching test waveforms r g = 25 ? l = 2mh v dd = 960v + - hgtG5N120BND t fi t d(off)i t ri t d(on)i 10% 90% 10% 90% v ce i ce v ge e off e on hgtG5N120BND, hgtp5n120bnd free datasheet http://

!"#$%"&'(%& %)'"%&'!%*$%('((!'&$$% "'+'%,'*- %& ''.$'- '($$%+!% !"'*%("&%%$%%(
/ 0 ! 11 2 2 345

1

23 45 11
3 45 1
1 1 2

1

3

21

6 2 7 1

21

11 2 1

21 11 23 2

$
2 (

( %

1
1 1
1
2

2

1
23
11
2 1

2

1

1

2

1

1

1

2
1

2
"
$
$
(
$

!"# ! $ % &
'( )
* + ,-./ ,
0 " " "!

"# ! 1+#
!% ! 0 #23 #24 #25 (
(+
# 6% 6 7
! 0!$8!#! 0!,8 0!,!
0 +$!
'! free datasheet http://

▲Up To Search▲

Price & Availability of G5N120BND

	To Download G5N120BND Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .